AVS 57th International Symposium & Exhibition
    Plasma Science and Technology Thursday Sessions
       Session PS-ThP

Paper PS-ThP7
Study of Plasma-based Ion Implantation Sterilization using High Resolution Rutherford Back Scattering

Thursday, October 21, 2010, 6:00 pm, Room Southwest Exhibit Hall

Session: Plasma Science and Technology Poster Session
Presenter: T. Tanaka, Hiroshima Institute of Technology, Japan
Authors: T. Tanaka, Hiroshima Institute of Technology, Japan
T. Hironaka, Hiroshima Institute of Technology, Japan
S. Hayashi, Japan Medical Creative, Japan
I. Koyama, Saitama Medical University, Japan
Correspondent: Click to Email
Plasma base ion implantation (PBII) with negative voltage pulses to the test specimen has been applied to the sterilization process as a technique suitable for three-dimensional work pieces. Pulsed high negative voltage (5μs pulse width, 300 pulses/s, -800 V to -13 kV) was applied to the electrode in this process at a gas pressure of 2.4 Pa of N2. We found that the PBII process reduced the numbers of active Bacillus pumilus cell using N2 gas self-ignitted plasma generated by only pulsed voltages. The number of bacteria survivors was reduced by 10-5 x with 5 min exposure. As the ion energy is the most important processing parameter, a simple method to estimate the nitrogen ion energy calculated using distribution for nitrogen in Si implanted by PBII was estimated. The ion implanted surface using PBII sterilization is discussed from measurements data using the High Resolution Rutherford Back Scattering (HR-RBS) .