| AVS 57th International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | Z. Chen, University of Houston |
| Authors: | Z. Chen, University of Houston V.M. Donnelly, University of Houston D.J. Economou, University of Houston |
| Correspondent: | Click to Email |
Initial diagnostic studies will be presented of a novel PE-CVD reactor suitable for self-limiting growth of thin films through a repetitive, step A / step B, process. In a single vacuum system, two independent plasma sources are operated to separate step A from step B. An Ar gas curtain minimizes mixing of the gases of the two plasma sources. As an example, this reactor could be used to deposit a very thin hydrogenated amorphous silicon (a-Si:H) film in step A, followed by exposure of this film to a hydrogen plasma in step B, to induce formation of silicon nano-crystallites. In the present reactor configuration, one plasma source is a capacitively-coupled plasma (CCP) reactor and the other is an inductively-coupled plasma (ICP) reactor. The substrate is moved back and forth between the two sources. Optical emission spectroscopy (OES) and mass spectrometry (MS) are used to detect radicals (OES) and stable feed gas and products (MS) in the two plasma sources. Results will be presented for a SiH4/He CCP and H2, N2 or O2 ICPs operating simultaneously. The degree of separation of the two plasma sources will be presented as a function of the Ar flow rate to the gas curtain, as well as the feed gas flow rates and pressures of the plasma sources.