AVS 56th International Symposium & Exhibition
    Plasma Science and Technology Thursday Sessions
       Session PS-ThP

Paper PS-ThP7
Experimental and Numerical Investigations of a Hollow Cathode Plasma Source for Microcrystalline Silicon Deposition

Thursday, November 12, 2009, 6:00 pm, Room Hall 3

Session: Plasma Science Poster Session
Presenter: F.C. Tung, ITRI/MSL, Taiwan, R.O.C.
Authors: F.C. Tung, ITRI/MSL, Taiwan, R.O.C.
T.C. Wei, Chung Yuan University, Taiwan, R.O.C.
S.W. Chau, National Taiwan University of Science and Technology, R.O.C.
P.S. Wu, ITRI/MSL, Taiwan, R.O.C
C.-H. Lin, Chung Yuan University, Taiwan, R.O.C.
Correspondent: Click to Email
Microcrystalline silicon thin films were grown by plasma enhanced chemical vapor deposition from a mixture of silane and hydrogen gases at low temperature. The effect of process parameters on the velocity, temperature and species concentration profiles are reviewed in this article. Several numerical simulation and in-situ plasma diagnostics on a hollow cathode plasma source and a process chamber are compared, which can be used to characterize the plasma properties. A global plasma model is developed for the plasma source and a CFD model is developed for the process chamber. Diagnostics of the plasma are carried out using a Langmuir probe and optical emission spectroscopy. Based on these investigations, an updated view on the role of the process parameters is presented.