AVS 53rd International Symposium | |
Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | PS2-TuM1 Invited Paper New Methods for Studying Plasma-Surface Interactions V.M. Donnelly, J. Guha, P.F. Kurunczi, University of Houston |
8:40am | PS2-TuM3 Studies of Oxygen and Chlorine Atom Recombination Reactions on Anodized Aluminum in O@sub 2@/Ar, Cl@sub 2@ and Cl@sub 2@/O@sub 2@ Plasmas by a Spinning Wall Method J. Guha, V.M. Donnelly, University of Houston |
9:00am | PS2-TuM4 Plasma-Surface Reaction Mechanisms for Si Etching Profiles in UHF-ECR Cl@sub 2@/O@sub 2@, Cl@sub 2@/O@sub 2@/HBr Plasmas M. Mori, N. Itabashi, Hitachi, Ltd., Japan, K. Eriguchi, K. Ono, Kyoto University, Japan |
9:20am | PS2-TuM5 Surface Reactions in Plasma Etching of Nitrided Hafnium Silicates R.M. Martin, J. Liu, University of California, Los Angeles, B. Xia, A. Misra, Air Liquide, J.P. Chang, University of California, Los Angeles |
9:40am | PS2-TuM6 Ion-Enhanced Plasma Etching of Hafnium Aluminates in Chlorine Based Plasmas R.M. Martin, University of California, Los Angeles, H.-O. Blom, Uppsala University, Sweden, J.P. Chang, University of California, Los Angeles |
10:40am | PS2-TuM9 Ion-Radical Synergy in HfO@sub 2@ Etching Studied in a Beam Experiment P.M. Gevers, H.C.W. Beijerinck, M.C.M. Van De Sanden, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |
11:00am | PS2-TuM10 Incorporation of the Kinetic Modeling into the 3-D Monte Carlo Profile Simulation W. Guo, H. Kawai, H.H. Sawin, Massachusetts Institute of Technology |
11:20am | PS2-TuM11 3-Dimensional Feature Scale Profile Simulation of Surface Roughness in Physical Sputtering Process H. Kawai, W. Guo, H.H. Sawin, Massachusetts Institute of Technology |
11:40am | PS2-TuM12 Modeling of Contact Hole Etching Profile in Two Geometrically Different Ways H. Fukumoto, K. Ono, K. Eriguchi, Kyoto University, Japan |
12:00pm | PS2-TuM13 Enhancement of NF3 Etching Rates in PECVD Chamber Cleaning J.J. An, B. Bai, H.H. Sawin, MIT |