AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS2-TuM

Paper PS2-TuM10
Incorporation of the Kinetic Modeling into the 3-D Monte Carlo Profile Simulation

Tuesday, November 14, 2006, 11:00 am, Room 2011

Session: Plasma Surface Interactions I: Joint AVS-AIChE Session
Presenter: W. Guo, Massachusetts Institute of Technology
Authors: W. Guo, Massachusetts Institute of Technology
H. Kawai, Massachusetts Institute of Technology
H.H. Sawin, Massachusetts Institute of Technology
Correspondent: Click to Email
The translating mixed-layer kinetic model was translated into the 3-dimensional feature scale simulation. Kinetic parameters were determined by matching simulated etching yields with those experimentally obtained from etching experiments. Bearing in mind the characteristics of 3-D simulation, such as discretized cellular structure and discontinuous composition, we developed an algorithm to translate the kinetic modeling. For example, by separating different reaction mechanisms such as neutral-initiated or ion-initiated, it initiates different sets of reactions once a particle strikes the surface and products are removed according to reaction rates. By averaging the compositions among all neighboring cells around the struck one, it resembles the layer translating down to the substrate. The simulator was able to predict the feature scale evolution as well as the etching yields by integrating the surface kinetics, the ion energy and angular dependence, and cell removal algorithm within the feature. A single stack of cells was used to test the performance of the simulator, with Si in Cl/Ar+, Si in Cl/Cl+, SiO2 in F/Ar+ chemistry at different neutral to ion flux ratios and energy levels. Etching yields and steady state composition were calculated and compared to the kinetic modeling results as well as experimental data. The results showed excellent agreement between experimental data, kinetic simulation and 3-D Monte Carlo simulation.