| AVS 53rd International Symposium | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS1-WeA1 Invited Paper Plasma-Wall Interactions in an Inductively Coupled Plasma Etching Reactor S. Ullal, Lam Research Corporation |
| 2:40pm | PS1-WeA3 Impact of Chamber Walls on Radical Densities in Cl@sub 2@ ICP Plasmas G. Cunge, CNRS-LTM, France, N. Sadeghi, CNRS, France, R. Ramos, Freescale Semiconductor Inc., France, O. Joubert, CNRS-LTM, France |
| 3:00pm | PS1-WeA4 Influence of Bombarding Energy on Stabilization of Radical Density of Fluorocarbon Plasma K. Kumagai, Chubu University, Japan, T. Tatsumi, K. Oshima, K. Nagahata, Sony Corporation, Japan, K. Nakamura, Chubu University, Japan |
| 3:20pm | PS1-WeA5 Modeling of Seasoning of Reactors: Effects of Ion Energy Distributions to Chamber Walls* A. Agarwal, University of Illinois at Urbana-Champaign, M.J. Kushner, Iowa State University |
| 3:40pm | PS1-WeA6 Invited Paper Plasma Requirements from Dielectric Etch Systems for Advanced Materials D.J. Hoffman, Applied Materials |
| 4:20pm | PS1-WeA8 Frequency Dependent Ion Kinetics in a 300 mm Dual-Frequency Capacitively Coupled Plasma Reactor G.A. Hebner, E.V. Barnat, P.A. Miller, Sandia National Laboratories, A.M. Paterson, J.P. Holland, Applied Materials |
| 4:40pm | PS1-WeA9 Spatial and Temporal Structure of a Sheath formed in a 300 mm, Dual-Frequency Capacitive Argon Discharge E.V. Barnat, G.A. Hebner, P.A. Miller, Sandia National Laboratories, A.M. Paterson, J.P. Holland, Applied Materials |