As materials of dielectric etch migrate to meet the needs of the 32 nm node, the needs in ion energy, density, ion energy distribution, and electron energy are expected to shift and mandate modifications to tool design. Specifically, low-k dielectric with k-value below 2.5 created need dramatically different energy spectrum than a deep etch into a very hard material. Other functions, such as chamber cleaning, ultra soft etch, via etch, and trench necessitate using densities that range from low 10@super 10@ cm@super -3@ to high 10@super 10@ cm@super -3@, ion energies in the range of 50 V to thousands of volts, and energy spread of 20 to 80 %. In this paper we, examine how 3-frequency capacitive systems can produce the requisite plasma parameters. In each capacitive system, the ability to create density is controlled by a) characteristic impedance, which then determines the voltage at relevant power b) given the voltage of the system and the plasma intrinsic rectification- the division between sheath creation and density creation, and c) given ion energy transit times for a characteristic density and sheath voltage, ion energy spread. With the process need establishing plasma targets, we compare how various frequency ranges can be used to produce the desired plasma.