| AVS 53rd International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-TuA1 Processing of High-k Oxide Thin Films for High Energy Density Capacitors G. Sethi, M.T. Lanagan, M.W. Horn, The Pennsylvania State University |
| 2:20pm | EM-TuA2 Growth of Epitaxial @gamma@-Al@sub 2@O@sub 3@ Films on 4H-SiC C.M. Tanner, University of California, Los Angeles, J. Lu, H.-O. Blom, Uppsala University, Sweden, J.P. Chang, University of California, Los Angeles |
| 2:40pm | EM-TuA3 Invited Paper SiC/SiO@sub2@ Interface and Near Interface Traps in SiC Based MOSFETs P.M. Lenahan, M.S. Dautrich, Penn State University, A.J. Lelis, US Army Research Labs |
| 3:20pm | EM-TuA5 Diffusion Barriers for High-Temperature Reliability of SiC Junction Field Effect Transistors S.E. Mohney, C.M. Eichfeld, B.Z. Liu, The Pennsylvania State University, A.V. Adedeji, J.R. Williams, Auburn University, S.H. Wang, A. Owen, The Pennsylvania State University, S.-H. Ryu, S. Krishnaswami, Cree |
| 3:40pm | EM-TuA6 Boride-based Schottky Contacts to p-GaN L.F. Voss, L. Stafford, J.-J. Chen, S.J. Pearton, F. Ren, University of Florida |
| 4:00pm | EM-TuA7 Invited Paper Materials Issues in Power Electronics: Silicon to Silicon Carbide K. Hobart, Naval Research Laboratory |
| 4:40pm | EM-TuA9 Optimized RIE Process for High Performance SiC BJTs A.B. Goulakov, F. Zhao, I. Peres-Wurfl, Microsemi Inc., B. Van Zeghbroueck, Colorado University, J. Torvik, Microsemi Inc. |