| AVS 53rd International Symposium | |
| Electronic Materials and Processing | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-MoA1 Metals are not Created Equal: Metal Barrier-layer Dependent Ohmic Performance of Ti/Al/Metal/Au Schemes on AlGaN/GaN Heterostructures F.M. Mohammed, L. Wang, I. Adesida, University of Illinois at Urbana-Champaign |
| 2:20pm | EM-MoA2 Tailoring the Interfacial Reactions between Ti/Al/Mo/Au Ohmic Contacts and AlGaN/GaN by Si lAyers: An Investigation by Cross-Sectional TEM L. Wang, F.M. Mohammed, I. Adesida, University of Illinois at Urbana-Champaign |
| 2:40pm | EM-MoA3 Invited Paper 2006 AVS Gaede-Langmuir Award Lecture - Interface Bonding, Reactions and Defect Formation at Semiconductor Interfaces L.J. Brillson, The Ohio State University |
| 3:20pm | EM-MoA5 Inhomogeneous Schottky Contacts on Silicon Carbide: Localized Fermi Level Pinning by Defects D.J. Ewing, Carnegie Mellon University, Q. Wahab, M. Syväjärvi, R. Yakimova, Linköping University, Sweden, S. Tumakha, M. Gao, L.J. Brillson, The Ohio State University, L.M. Porter, Carnegie Mellon University |
| 3:40pm | EM-MoA6 Carbon Nanotube Based Transparent Contacts for Photovoltaics T.M. Barnes, J. van de Lagemaat, M. Contreras, G. Rumbles, S.E. Shaheen, T.J. Coutts, National Renewable Energy Lab, C.L. Weeks, I.A. Levitsky, J.A. Peltola, P.J. Glatkowski, D.A. Britz, EIKOS, Inc |
| 4:00pm | EM-MoA7 Tuning the Schottky Barrier Height in Mg/Si Diodes H. Nienhaus, S. Glass, University of Duisburg-Essen, Germany |
| 4:20pm | EM-MoA8 High-Resolution Depth Profiling of Implanted As and Sb in Si(001) with Excess Vacancy Concentration M. Dalponte, H. Boudinov, Universidade Federal do Rio Grande do Sul, Brazil, L.V. Goncharova, T. Feng, T. Gustafsson, E. Garfunkel, Rutgers University |
| 4:40pm | EM-MoA9 Mechanism of Initial Oxidation of Hydrogen and Halogen Passivated Ge Surfaces S. Sun, Stanford University, Y. Sun, Z. Liu, D. Lee, P. Pianetta, Stanford Synchrotron Radiation Laboratory |