AVS 53rd International Symposium
    Electronic Materials and Processing Monday Sessions
       Session EM-MoA

Paper EM-MoA9
Mechanism of Initial Oxidation of Hydrogen and Halogen Passivated Ge Surfaces

Monday, November 13, 2006, 4:40 pm, Room 2003

Session: Contacts, Interfaces and Defects in Semiconductors
Presenter: S. Sun, Stanford University
Authors: S. Sun, Stanford University
Y. Sun, Stanford Synchrotron Radiation Laboratory
Z. Liu, Stanford Synchrotron Radiation Laboratory
D. Lee, Stanford Synchrotron Radiation Laboratory
P. Pianetta, Stanford Synchrotron Radiation Laboratory
Correspondent: Click to Email
In order to keep scaling down the CMOS, new semiconductor materials are needed. Germanium (Ge) is one of the good candidates, because of its high intrinsic low field carrier mobilities. Research shows that Ge surface can be cleaned by HX (X = F, Cl, Br, I) and passivated by hydrogen or halogen. However, our experimental results show that neither hydrogen nor halogen passivated surfaces are stable in the room air. To be more specific, oxide will grow on these passivated surfaces in the room air. In order to probe the mechanism of the initial surface oxidation, systematic study is performed by synchrotron radiation photoelectron spectroscopy (SR-PES) at Stanford Synchrotron Radiation Laboratory (SSRL). Experimental results for samples with different passivation (hydrogen and halogen) and under various oxidation conditions (dry oxygen, moisture, and mixture of oxygen and moisture) will be shown, respectively. Then, results for different sample orientations, i.e. (111), (100) and (110), will be compared. Finally, the oxidation mechanism will be discussed in detail.