AVS 53rd International Symposium
    Electronic Materials and Processing Friday Sessions

Session EM+TF-FrM
High-k Dielectric & Multi-Functional Oxide Growth & Processing

Friday, November 17, 2006, 8:00 am, Room 2003
Moderator: R.L. Opila, University of Delaware


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am EM+TF-FrM1
Chemical Analyses and Electrical Studies of HfO@sub 2@/Y@sub 2@O@sub 3@, Y@sub 2@O@sub 3@/HFO@sub 2@ Bilayered and Y@sub x@Hf@sub y@O@sub z@ Intermixed Dielectric Materials for MIM Capacitors
M. Kahn, C. Vallee, C. Dubourdieu, M. Bonvalot, J.R. Plaussu, J. Ducote, T. Baron, O. Joubert, LTM/CNRS, France
8:20am EM+TF-FrM2
Process-Dependent Interface States at Mo/Hafnium Oxide/Si Interfaces
S. Walsh, L. Fang, The Ohio State University, J.K. Schaeffer, E. Weisbrod, Freescale Semiconductor, Inc., L.J. Brillson, The Ohio State University
8:40am EM+TF-FrM3 Invited Paper
Materials Challenges for High Permittivity Gate Dielectrics and Metal Gate Electrodes
J.K. Schaeffer, D. Gilmer, S. Samavedam, M. Raymond, D.H. Triyoso, R.I. Hegde, M. Stoker, S. Kalpat, C. Capasso, B. Taylor, P.J. Tobin, B.E. White, Freescale Semiconductor, Inc., S. Walsh, L. Fang, L.J. Brillson, The Ohio State University
9:20am EM+TF-FrM5 Invited Paper
Molecular Beam Epitaxy of Multifunctional Materials Using a Chloride Refractory Metal Chemistry
W.A. Doolittle, A.G. Carver, W. Henderson, W. Laws Calley, S.-S. Kim, Georgia Institute of Technology
10:00am EM+TF-FrM7
Magnesium Oxide Thin Film 'Bridge' on Hexagonal Silicon Carbide for Integration of Functional Oxides
T.L. Goodrich, Z. Cai, K.S. Ziemer, Northeastern University
10:20am EM+TF-FrM8
Zirconium Dioxide Formation on Silicon Surfaces by Metal-Organic Chemical Vapor Deposition in UHV
A. Sandell, P.G. Karlsson, J.H. Richter, Uppsala University, Sweden, J. Blomquist, P. Uvdal, Lund University, Sweden, T.M. Grehk, Hogskolan Dalarna, Sweden
10:40am EM+TF-FrM9
Controlling Interfacial Reactions between HfO@sub 2@and Si using Ultra-Thin Diffusion Barriers
R.R. Katamreddy, University of Illinois at Chicago, R. Inman, G. Jursich, A. Soulet, American Air Liquide, C.G. Takoudis, University of Illinois at Chicago
11:00am EM+TF-FrM10
Comparison of the Calculated Electronic Structure of Oxygen and Nitrogen Adsorption onto Ge(100)
S.R. Bishop, T.J. Grassman, A.C. Kummel, University of California, San Diego
11:20am EM+TF-FrM11
Thermal Stability of High-k Dielectrics on Ge(001)
F.S. Aguirre-Tostado, M.J. Kim, R.M. Wallace, University of Texas at Dallas, R. Sreenivasan, K.-I. Seo, C.O. Chui, K.C. Saraswat, P.C. McIntyre, Stanford University, F.A. Stevie, R. Garcia, Z. Zhu, D.P. Griffis, North Carolina State University
11:40am EM+TF-FrM12
Oxidation Properties of Al-nanostructures on Si Surfaces
P. Morgen, University of Southern Denmark, C. Janfelt, University of Copenhagen, Denmark, K. Pedersen, University of Aalborg, Denmark, Z.S. Li, University of Aarhus, Denmark