AVS 53rd International Symposium
    Electronic Materials and Processing Friday Sessions
       Session EM+TF-FrM

Paper EM+TF-FrM11
Thermal Stability of High-k Dielectrics on Ge(001)

Friday, November 17, 2006, 11:20 am, Room 2003

Session: High-k Dielectric & Multi-Functional Oxide Growth & Processing
Presenter: R.M. Wallace, University of Texas at Dallas
Authors: F.S. Aguirre-Tostado, University of Texas at Dallas
M.J. Kim, University of Texas at Dallas
R.M. Wallace, University of Texas at Dallas
R. Sreenivasan, Stanford University
K.-I. Seo, Stanford University
C.O. Chui, Stanford University
K.C. Saraswat, Stanford University
P.C. McIntyre, Stanford University
F.A. Stevie, North Carolina State University
R. Garcia, North Carolina State University
Z. Zhu, North Carolina State University
D.P. Griffis, North Carolina State University
Correspondent: Click to Email
The use of high-mobility channel materials, such as SiGe and Ge has attracted substantial interest as a means to maintain integrated circuit scaling and performance. A necessary requirement for a MOSFET application is a stable gate dielectric which can be integrated into an appropriate CMOS process flow. High-k dielectrics, such as ZrO@sub 2@ and HfO@sub 2@ have been previously reported for this application with promising electrical results.@footnote 1,2,3@ This paper will describe thermal stability studies of these high-k dielectrics on Ge(001) using in-situ ARXPS and SPM analysis in conjunction with backside SIMS@footnote 4@ and HRTEM analysis. The extent of Zr, Hf and Ge interdiffusion is examined with oxide or oxynitride interfacial layers. Corresponding electrical characterization of the associated devices will also be described in view of the thermal budget where the maximum process temperature is ~500°C. @FootnoteText@@footnote 1@K.I. Seo, P.C. McIntyre, S. Sun, D.I. Lee, P. Pianetta, K.C. Saraswat, Appl. Phys. Lett. 87 (2005) 042902. @footnote 2@D. Chi, C.O. Chui, K.C. Saraswat, B.B. Triplett, P.C. McIntyre, J. Appl. Phys. 96 (2004) 813. @footnote 3@C.O. Chui, H. Kim, P.C. McIntyre, K.C. Saraswat , IEEE Elec. Dev. Lett. 25 (2004) 274. @footnote 4@C. Gu, et. al., J. Vac. Sci. Technol. B22, 350 (2004).