AVS 53rd International Symposium
    Electronic Materials and Processing Friday Sessions
       Session EM+TF-FrM

Paper EM+TF-FrM8
Zirconium Dioxide Formation on Silicon Surfaces by Metal-Organic Chemical Vapor Deposition in UHV

Friday, November 17, 2006, 10:20 am, Room 2003

Session: High-k Dielectric & Multi-Functional Oxide Growth & Processing
Presenter: A. Sandell, Uppsala University, Sweden
Authors: A. Sandell, Uppsala University, Sweden
P.G. Karlsson, Uppsala University, Sweden
J.H. Richter, Uppsala University, Sweden
J. Blomquist, Lund University, Sweden
P. Uvdal, Lund University, Sweden
T.M. Grehk, Hogskolan Dalarna, Sweden
Correspondent: Click to Email
Previous work has shown that deposition of zirconium tetra-tert-butoxide at elevated temperatures leads to the formation of a ZrO2 film. The previous studies also reveal the presence of an interfacial region between the Si substrate and the ZrO2 film. However, up to date, the evolution of the interface has not been comprehensively addressed using surface science techniques. In this contribution, a detailed study of the growth and interface formation on Si(100) and Si(111) in UHV is presented. Core level photoelectron spectra provide information on the growth rate, atomic oxidation state and the chemical composition of the interface, including the fate of the butoxy ligands. X-ray absorption spectra give valuable complementary information on the local geometric structure of the Zr-O units and the Zr-O electronic interaction. In addition, STM images of the first stages of nucleation are shown. These suggest that it is possible to distinguish between precursors induced defects on the Si(100) surface related to oxidation and reaction with carbonaceous fragments, respectively.