| AVS 53rd International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM+AS-ThM1 A Study of High Dielectric Constant Magnesium Oxide Film Interfaces with Si L. Yan, R.P. Shrestha, E.A. Irene, University of North Carolina-Chapel Hill, L. Zhong, I. Kim, O. Auciello, Argonne National Lab |
| 8:20am | EM+AS-ThM2 Channel Drift Mobility in High-k Transistors from Galvanomagnetic Measurements R.T. Bate, W.P. Kirk, R. Agrawal, University of Texas at Arlington, R.M. Wallace, B.E. Gnade, G. Pant, University of Texas at Dallas |
| 8:40am | EM+AS-ThM3 Invited Paper Interface Composition and Band Alignment in Nano-electronics S. Rangan, E. Bersch, R.A. Bartynski, L.V. Goncharova, T. Gustafsson, E. Garfunkel, Rutgers University |
| 9:20am | EM+AS-ThM5 Band Offsets Measurements of Metal/High-k/Semiconductor Structures S. Rangan, E. Bersch, R.A. Bartynski, E. Garfunkel, Rutgers University |
| 9:40am | EM+AS-ThM6 A Soft-X-Ray Photoelectron Spectroscopy Study of D-State Contributions to Valence Band States in Nanocrystalline HfO2, TiO2, and Hf1-xTixO2 Alloys L.B. Fleming, M.D. Ulrich, NC State University, J. Rowe, University of North Carolina at Chapel Hill, C.C. Fulton, G. Lucovsky, NC State University |
| 10:00am | EM+AS-ThM7 Line-Width and Symmetry Changes in Jahn Teller Term-Split Sc 3d-States in LaScO3 as a Function of Deposition and Annealing Temperatures H. Seo, NC State University, L.F. Edge, D.G. Schlom, Penn State University, N.A. Stoute, G. Lucovsky, NC State University |
| 10:20am | EM+AS-ThM8 Trends in Core Level Binding Energies of Mixed Oxide Candidates for High-@kappa@ Dielectrics A. Mathew, University of Delaware, L. Bao, Dupont Inc., K. Demirkan, University of Delaware, C.-G. Wang, G.D. Wilk, ASM America Inc., R.L. Opila, University of Delaware |