AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM+AS-ThM

Invited Paper EM+AS-ThM3
Interface Composition and Band Alignment in Nano-electronics

Thursday, November 16, 2006, 8:40 am, Room 2003

Session: High-k Dielectric Characterization
Presenter: E. Garfunkel, Rutgers University
Authors: S. Rangan, Rutgers University
E. Bersch, Rutgers University
R.A. Bartynski, Rutgers University
L.V. Goncharova, Rutgers University
T. Gustafsson, Rutgers University
E. Garfunkel, Rutgers University
Correspondent: Click to Email
We outline some key issues relevant to characterization of interfaces in next-generation highly-scaled CMOS devices. Selected experimental results as well as conceptual approaches to addressing the structure, bonding and band alignment problems will be discussed. The semiconductor/high-K and high-K/metal interfaces will be the primary focus of the discussion. Ion scattering, photoemission, inverse photoemission, electron microscopy, and other methods have been used to examine (i) amorphous high-K gate dielectrics and their interfaces on Si, Ge and GaAs, (ii) epitaxial oxides on Si, and (iii) metal-dielectric interfaces for gate metallization. From a comparison of experimental and theoretical results we are able to develop a better understand the electronic properties of the different structures. We find that the band gap, barrier height and dielectric response of this class of materials are very phase-dependent. An understanding and control of band alignment for charge injection and carrier confinement must be realized if novel materials are to be incorporated in future nano-electronic devices.