AVS 53rd International Symposium
    Thin Film Monday Sessions
       Session TF-MoM

Paper TF-MoM8
Plasma Enhanced Atomic Layer Deposition of TiO@sub 2@ and HfO@sub 2@: Plasma Source Configuration and Film Properties

Monday, November 13, 2006, 10:20 am, Room 2022

Session: ALD and Applications I
Presenter: H. Kim, POSTECH, Korea
Authors: S.M. Rossnagel, IBM T.J. Watson Research Center
J. Joo, Kunsan National University, Korea
H. Kim, POSTECH, Korea
Correspondent: Click to Email
Plasma enhanced atomic layer deposition has advantages over thermal atomic layer deposition method in deposition rate, deposition temperature window, film density and choice of precursors. The role of plasma can be summarized into two categories; selective dissociation of precursors and enhancement of nucleation site density. Four different configuration of high density plasma sources were developed and applied to deposit TiO@sub 2@ and HfO@sub 2@ on 200 mm Si wafers using TIIP(titanium isoproxide) and TEMAH(tetrakis ethyl methyl amido hafnium) as precursors. For reactants, oxygen and water plasma were used. In addition, these same materials were evaluated by thermal ALD in the same tool. Optical emission spectroscopy was used as a real time diagnostic tool. Thickness and refractive index uniformity was monitored by ellipsometry. Chemical composition was evaluated by XPS and RBS. TiO2 was rather insensitive to the configuration of plasma sources; the distance to the wafer, or the size of the plasma sources. 2% of non-uniformity in thickness and refractive index was typically obtained from 1 inch diameter inductively coupled plasma source, which means radical dominant process both in abstraction and nucleation steps. Leakage current and C-V characteristics showed good results in higher film thickness than 3.5nm of TiO@sub 2@. HfO@sub 2@/TiO@sub 2@ multilayer and Hf@sub x@Ti@sub (1-x)@O@sub 2@ films were deposited to seek good combination for gate stacks.