AVS 53rd International Symposium
    Thin Film Monday Sessions
       Session TF-MoM

Paper TF-MoM6
Atomic Layer Deposition of Y@sub 2@O@sub 3@-Al@sub 2@O@sub 3@ Nanolaminate Thin Films and Compounds

Monday, November 13, 2006, 9:40 am, Room 2022

Session: ALD and Applications I
Presenter: J.C. Rowland, University of Florida
Authors: J.C. Rowland, University of Florida
M. Davidson, University of Florida
P.H. Holloway, University of Florida
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Alternating nano-scale thin films of Y@sub 2@O@sub 3@ and Al@sub 2@O@sub 3@ were grown by atomic layer deposition (ALD) with AlCl@sub 3@, Y(thd)@sub 3@, and H@sub 2@O precursors. The surface roughness was determined by AFM versus growth parameters such as substrate temperature (250-550°C), gas sweep time, etc. Growth rates of 0.4 nm/cycle were demonstrated. The composition was analyzed by Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS), and shown to have low concentrations of impurities, especially Cl from the Al precursors. The microstructure and crystallinity / amorphicity were characterized using cross-sectional transmission electron microscopy (TEM), and X-ray diffraction (XRD). These data are interpreted in terms of the layer-by-layer ALD growth mode and compared to the properties of a single oxide film of Y@sub 2@O@sub 3@ or Al@sub 2@O@sub 3@. Solid state diffusion during post-growth annealing was investigated for forming various Y@sub 2@O@sub 3@-Al@sub 2@O@sub 3@ compounds such as Y@sub 2@Al@sub 5@O@sub 12@ (YAG), YAlO@sub 3@ (YAP), and Y@sub 4@Al@sub 2@O@sub 9@ (YAM), having cubic garnet, orthorhombic perovskite, and monoclinic structures, respectively.