AVS 53rd International Symposium
    Thin Film Monday Sessions
       Session TF-MoM

Paper TF-MoM2
MnO@sub 2@ and MgO Atomic Layer Deposition Using Bis(Ethylcyclopentadienyl) Precursors and H@sub 2@O

Monday, November 13, 2006, 8:20 am, Room 2022

Session: ALD and Applications I
Presenter: B.B. Burton, University of Colorado at Boulder
Authors: B.B. Burton, University of Colorado at Boulder
F.H. Fabreguette, University of Colorado at Boulder
D.N. Goldstein, University of Colorado at Boulder
S.M. George, University of Colorado at Boulder
Correspondent: Click to Email
The atomic layer deposition (ALD) of manganese oxide (MnO@sub 2@) and magnesium oxide (MgO) was studied using Fourier transform infrared (FTIR) spectroscopy and quartz crystal microbalance (QCM) measurements. MnO@sub 2@ ALD was performed at temperatures between 100-300°C using sequential exposures of Mn(CpEt)@sub 2@ [bis(ethylcyclopentadienyl)manganese] and H@sub 2@O. MgO ALD was performed at temperatures between 125-400°C using sequential exposures of Mg(CpEt)@sub 2@ [bis(ethylcylopentadienyl)magnesium] and H@sub 2@O. The FTIR spectra were consistent with a loss of O-H vibrational features and a gain of C-H vibrational features during the M(CpEt)@sub 2@ exposure. The H@sub 2@O exposure produced a gain in O-H vibrational features and a loss of C-H vibrational features. The M-O bulk vibrational modes were also observed to grow in both cases between 500-1000 cm@super -1@. The QCM showed a maximum mass gain per cycle (MGPC) of 56 ng/cm@super 2@/cycle for MnO@sub 2@ at 150°C and a MGPC of 44 ng/cm@super 2@/cycle for MgO at 150°C. Both reactions were very efficient and required reactant exposures of only 2 x10@super 5@ L (1 L = 1 x 10@super -6@ Torr s). The X-ray reflectivity (XRR) measurements were consistent with growth rate of ~1.1 Å/cycle at 150°C and ~1.41 Å/cycle at 150°C for MnO@sub 2@ and MgO, respectively. Based on thicknesses measured by XRR and the MGPC obtained by QCM, the density for the MnO@sub 2@ ALD films was 4.95 g/cm@super 3@ and the density for the MgO ALD films was 3.15 g/cm@super 3@. Transmission electron microscopy (TEM) was also performed after 40 AB cycles of MnO@sub 2@ ALD and 50 cycles of MgO ALD on ZrO@sub 2@ particles. In agreement with the growth rates obtained from the XRR measurements, the film thicknesses observed by TEM were 54 Å and 85 Å for MnO@sub 2@ and MgO, respectively.