Boron nitride (BN) is a desired material due to its thermal, electrical and tribological properties. The ability to deposit certain phases of BN via atomic layer deposition (ALD) could potentially solve a number of materials issues related to packaging and to MEMS systems. This talk describes the deposition, materials characterization and resulting electrical properties of ALD grown BN at a deposition temperature of 480 °C. Initial work on the ALD of BN was performed by Ferguson and George using FT infrared spectroscopy on ZrO@sub 2@ particles.@footnote 1@ Their work determined that large reactant exposures were necessary to complete the ALD surface chemistry. To produce ALD films of BN, an ALD viscous flow reactor was run in a quasi-static mode to obtain the necessary exposures required to saturate the surface chemistry. NH@sub 3@ and two different boron precursors were used to make BN thin films. Both BCl@sub 3@ and B(CH@sub 3@)@sub 3@ precursors were successful at producing BN ALD. The resulting thin films were analyzed with depth profile Auger electron spectrometry and x-ray diffraction. The BN films were amorphous as grown and did not convert to a crystalline phase under rapid thermal annealing conditions. The BN ALD grew at a rate of 0.7 Å/cycle at the 480 °C reaction temperature. Electrical measurements were performed on the BN ALD thin films as a function of film thickness. The breakdown voltage, leakage current and dielectric constant were measured for each BN synthesis and compared. Although BN ALD is a time consuming process, it can provide amorphous, low dielectric constant, pinhole free films for potential electrical, and diffusion barrier applications. @FootnoteText@ @footnote 1@ J.D. Ferguson, A.W. Weimer, S.M George, Thin Solid Films 413 16 (2002).