AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS3-TuP

Paper PS3-TuP6
Behavior Analysis of Various Organosilicon Molecules in PECVD Processes

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Advanced Plasma Deposition Poster Session
Presenter: T. Yoshida, Nagoya University, Japan
Authors: T. Yoshida, Nagoya University, Japan
Y.S. Yun, Nagoya University, Japan
N. Shimazu, Nagoya University, Japan
Y. Inoue, Nagoya University, Japan
N. Saito, Nagoya University, Japan
O. Takai, Nagoya University, Japan
Correspondent: Click to Email
Plasma enhanced chemical vapor deposition (PECVD) using organosilicon reactants are one of the most promising deposition processes because of its ability to prepare several functional films such as low-k films for semiconductor devices and ultra water-repellent coatings.ã??Although large number of studies has been made on the relations between film properties and functions, fewer studies has been devoted to the plasma itself. Therefore, the behavior of organosilicon molecules in PECVD processes has been poorly understood. To control the film property, it is absolutely imperative to clarify the behavior of organosilicon molecules. In this study, we investigate the behavior of reactant organosilicon molecules in plasma by means of Optical emission spectroscopy (OES), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and other analysis. The hydrocarbon-doped silicon oxide films were prepared with an inductively-coupled rf PECVD system. Trimethylmethoxysilane (TMMOS), hexamethyldisiloxane (HMDSO) and hexamethylcyclotrisiloxane (HMCTS) are used as reactants. Si(100) substrates were kept at around room temperature during deposition. The OES of HMDSO and HMCTS plasmas were very similar and are dominated by H, H2 and CH emissions. On the other hand, we could observe not only H, H2 and CH but also CO and OH emissions in TMMOS plasma. It propose that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent whereas siloxane bondings in HMDSO and HMCTS are hardly expel oxygen atoms.