AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS3-TuP

Paper PS3-TuP15
Nanopantography: A New Approach for Massively Parallel Fabrication of Nano-Structures

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Advanced Plasma Deposition Poster Session
Presenter: M.K. Jain, University of Houston
Authors: M.K. Jain, University of Houston
L. Xu, University of Houston
S.C. Vemula, University of Houston
S.K. Nam, University of Houston
V.M. Donnelly, University of Houston
D.J. Economou, University of Houston
P. Ruchhoeft, University of Houston
Correspondent: Click to Email
Nanopantography is a new method for forming nano-structures on a massively parallel scale. A nearly monoenergetic ion beam (FWHM < 3 eV at 100 eV) is directed at a 3-layer (Cr/SiO@sub 2@/Si substrate) electrostatic lens structure built on a silicon wafer. A typical lens consists of a micron size hole etched through the metal and oxide layers down to the Si substrate. When the optimum potential is imposed on the metal layer, the ion "beamlets" entering the 1 µ hole openings focus to 10 nm size spots. Optimum potentials were obtained by ion trajectory simulations. Etching or deposition on the Si substrate can be accomplished depending on the choice of ions and effusive neutral beams. We performed etching experiments with 100 eV Ar@super +@ ions, formed in a pulsed ICP, and a Cl@sub 2@ effusive beam, and etched 10nm dia., 100 nm deep holes in Si with 950nm dia. lenses. When the sample was tilted 20@super o@ off normal with respect to the ion beam axis, the focused spot moved by 160nm off axis, in agreement with simulations. Thus, sample tilting will enable us to write lines and complex patterns with nanometer resolution. Deposition of ~50 nm dia. Ni islands was also accomplished with 20 eV Ni@super +@ ions formed by sputtering of a Ni target in the pulsed ICP.