AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS3-TuP

Paper PS3-TuP11
Atmospheric Plasma Deposition of Silicon Dioxide Coatings on Metal

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Advanced Plasma Deposition Poster Session
Presenter: A.M. Ladwig, University of California - Los Angeles
Authors: A.M. Ladwig, University of California - Los Angeles
S.E. Babayan, Surfx Technologies
M.D. Smith, National Nuclear Security Administration's Kansas City Plant Operated by Honeywell Federal Manufacturing and Technologies
W. Highland, National Nuclear Security Administration's Kansas City Plant Operated by Honeywell Federal Manufacturing and Technologies
R.F. Hicks, University of California - Los Angeles
Correspondent: Click to Email
The deposition and properties of silicon dioxide on metal substrates was investigated using atmospheric pressure plasma-enhanced chemical vapor deposition. The plasma, generated with radio frequency power at 27.12 MHz, was fed helium, oxygen and two types of silicon precursors, hexamethyldisilizane and tetraethylorthosilicate. After deposition, the films were analyzed for composition, adhesion and dielectric strength. X-ray photoelectron spectroscopy revealed that the glass films contained approximately 25 percent silicon, 50 percent oxygen and 25 percent carbon with negligible nitrogen. Scratch tests indicated that the films were strongly adherent to the substrates. The glass films achieved direct current dielectric strengths between 50 and 250 V for a thickness range of 0.5 to 1.3 µm. The maximum breakdown voltage measured was 400 V. Scanning electron microscopy revealed that breakdown occurred at cracks and other defects in the films. These defects appeared to form around areas of surface roughness and contamination. The process conditions and their effects on the properties of silicon dioxide will be presented.