AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS3-TuP

Paper PS3-TuP1
Room Temperature Crystallization of Amorphous Thin Films using RF Plasma

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Advanced Plasma Deposition Poster Session
Presenter: Y. Shibayama, The University of Tokyo, Japan
Authors: Y. Shibayama, The University of Tokyo, Japan
M. Suzuki, The University of Tokyo, Japan
A. Kinbara, The University of Tokyo, Japan
T. Watanabe, The University of Tokyo, Japan
H. Ohsaki, The University of Tokyo, Japan
Correspondent: Click to Email
Crystallization of amorphous thin films was achieved by using a RF plasma treatment. Sol-gel TiO@sub 2@ / Si wafer, sputtered ITO / glass and sputtered Si / glass are crystallized by 2 minute-treatment and the sample temperature is lower than 150°C during the plasma treatment. Sol-gel derived TiO@sub 2@ films with about 66% packing density was densified to 91% and crystallized into anatase. Plasma-crystallized anatase films show photo-induced super-hydrophilicity and photocatalytic activities while as-coated sol-gel TiO@sub 2@ does not indicate such phenomena. Amorphous ITO films were deposited on soda-lime glass with alkali-barrier silica film without substrate heating. Resistivity of ITO films decreased by the plasma treatment and the surface of the ITO films was kept smooth after the treatment. Amorphous Silicon film including a small amount of randomly orientated crystallites were prepared by sputter method and XRD peaks grew by the plasma treatment with keeping the XRD peak height ratios almost the same as ones of polycrystalline Silicon. Amorphous Silicon films with preferred oriented crystallites were also prepared by sputter method. It can be concluded from XRD analyses that the plasma treatment realizes preferential crystal growth. In the presentation, the details of this plasma crystallization technology will be presented.