AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS2-TuP

Paper PS2-TuP9
Development of Dual-Frequency Inductively Coupled Plasma and Control of Plasma Parameters Changing the Power Ratio between High- and Low-Frequency rf Sources

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Etching and Process Integration Poster Session
Presenter: S.-H. Seo, Korea Advanced Institute of Science and Technology
Authors: S.-H. Seo, Korea Advanced Institute of Science and Technology
H.-S. Lee, Korea Advanced Institute of Science and Technology
H.-Y. Chang, Korea Advanced Institute of Science and Technology
Correspondent: Click to Email
A novel dual-frequency inductively coupled plasma source which was developed for high-density plasma CVD process was presented. Two coaxial planar-type antennae consisting an outer single-turn antenna with a diameter of 300 mm and an inner multi-turn antenna were used for the plasma generation and applied by two rf powers with different frequency. The two rf power sources with the frequencies of 2 and 13.56 MHz respectively were used in the experiment. A Langmuir probe with four chock filters for the rf compensation for the primary and the second harmonic rf noises of each frequency was used to characterize the dual-frequency inductive plasma. It was found that the electron temperature can be controlled by changing the power ratio between two rf sources and is ranged within the electron temperatures achieved in the single-frequency inductively coupled plasma with each frequency. Also, the power ratio between two frequencies and the configuration of two antennae was found to control the plasma uniformity in the radial direction. Here, the experimental results such as the diagnostic and CVD process results will be presented and the effect of two rf powers on the plasma characteristics and the CVD process will be discussed.