AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS2-TuP

Paper PS2-TuP8
Formation of Silicon Nitride Nano-Pillar Hard-Mask Patterns in Dual-Frequency Superimposed Capacitively Coupled Plasma and Their Application to Nano-Scale Si Etching

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Etching and Process Integration Poster Session
Presenter: C.K. Park, Sungkyunkwan University, Korea
Authors: C.K. Park, Sungkyunkwan University, Korea
C.H. Lee, Sungkyunkwan University, Korea
H.T. Kim, Sungkyunkwan University, Korea
N.-E. Lee, Sungkyunkwan University, korea
Correspondent: Click to Email
Fabrication of silicon nano-scale structures has attracted much interest because of distinctive differences in the etch properties of these nano-scale hole compared with large-size diameter hole (@>=@ 100 nm). However, it is difficult for conventional optical lithography techniques to make patterns smaller than a light wavelength. Nano-scale etching using nano-pillars formed by non-lithographic method can be very useful for under standing the etch characteristic of nano-scale patterns. In this work, we investigated nano-scale etching of silicon pattern with the diameter less than 30-nm using the silicon nitride nano-pillars as hard-mask or lift-off mask. Silicon nitride layers were etched with CH@sub 2@F@sub 2@/H@sub 2@/Ar dual frequency superimposed capacitively coupled plasma (DFS-CCP). During the etching process the CF@sub x@ polymer nano-dots are formed on silicon nitride surface, which leads to the formation of silicon nitride nano-pillars. Nano-scale Si pillar etching using the silicon nitride nano-pillar hard-mask or Si hole pattern etching using polymer mask generated by lift-off method were carried out. Etching characteristics of nano-scale silicon patterns will be discussed in detail in conjunction with the silicon nitride nano-pillar hard-mask fabrication.