AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS2-TuP

Paper PS2-TuP7
Plasma Chemistries for High-Aspect-Ratio Dielectric Etching Beyond 65 nm Node

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Etching and Process Integration Poster Session
Presenter: T.L. Anglinmatumona, San Jose State University
Authors: T.L. Anglinmatumona, San Jose State University
C.T. Gabriel, Advanced Micro Devices
Correspondent: Click to Email
The transition from saturated (c-C4F8, C-C) to unsaturated (1,3-C4F6, C=C) plasma gases was found to lessen the challenges of low selectivity and ARDE. The shrinking diameter of the via-hole due to scaling feature sizes is inducing an austere list of etch challenges. Saturated chemistries are known to generate large molecular-weight radicals that lead to poor etch performance with increasing aspect ratios. Due to the changing dynamics of device sizing, saturated chemistries offer limited etch performance which is mainly driven by their high energy thresholds and bond decomposition scheme. Data in this research show the chemistry of hexafluorobutadiene (1,3-C4F6) is helping to enable good etch performance with increasing aspect ratios beyond 65 nm. The etch selectivity was improved by 2X. ARDE was reduced and showed a via-depth improvement of 11.5%.