AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS2-TuP

Paper PS2-TuP3
A Comparative Study of Wafer Edge, Backside and Bevel Etching Properties for Oxide, TiN and Amorphous Carbon Films with Torus-Shaped Capacitive Coupled Plasma Source

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Etching and Process Integration Poster Session
Presenter: J.-H. Yang, HYNIX Semiconductor Inc, Republic of Korea
Authors: S.-H. Cho, HYNIX Semiconductor Inc, Republic of Korea
J.-H. Yang, HYNIX Semiconductor Inc, Republic of Korea
I.-S. Choi, HYNIX Semiconductor Inc, Republic of Korea
J.-K. Kim, HYNIX Semiconductor Inc, Republic of Korea
H.-J. Lee, HYNIX Semiconductor Inc, Republic of Korea
B.-H. Choi, HYNIX Semiconductor Inc, Republic of Korea
J.W. Kim, HYNIX Semiconductor Inc, Republic of Korea
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The film residues polymer that are generated during the semiconductor device processing on the wafer edge, backside and bevel area are known to be severe particle source. These areas need to be cleaned to prevent the particle from inflowing into the pattern area. In this study, the bevel etching properties for oxide, TiN and amorphous carbon film with torus-shaped capacitive coupled plasma source are examined to find ways to remove harmful film residues polymer on the wafer edge, backside and bevel area. The optimum plasma process conditions without plasma damage on wafer pattern area will be discussed as a function of processing parameter such as pressure, power and gas ratio.