AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS2-TuP

Paper PS2-TuP15
Deposition and Characterization of SiO@sub x@N@sub y@Bottom Anti Reflective Coating (BARC)

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Etching and Process Integration Poster Session
Presenter: X. Peng, Seagate Technology
Authors: X. Peng, Seagate Technology
Z.Y. Wang, Seagate Technology
D. Dimtrov, Seagate Technology
S. Xue, Seagate Technology
Correspondent: Click to Email
With the shrinking of the critical feature line width in both semiconductor and storage industries to meet the ever-increasing requirement for high package density/recording density, the control of the critical feature dimension at sub 100 nm is a big challenge. The industry trend is using shorter wavelength (193 nm for example) lithography for better resolution and using BARC for minimizing standing wave formation and better CD control. Matching the optical constants (n, k) between the BARC, photo resist and underlayer is critical in eliminating the standing waves. SiO@sub x@N@sub y@ and SiO@sub x@C@sub y@ are two attractive inorganic BARC candidates, due to their adjustable optical constant by varying the deposition parameters and their etching compatibility with standard plasma process. SiO@sub x@N@sub y@ films have been prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) approach at various process parameters, such as SiH4 flow rate, SiH@sub 4@/N@sub 2@O ratio and NH3 flow rate. SiO@sub x@N@sub y@ films have been characterized using x-ray photoelectron spectroscopy (XPS) for chemical composition depth profile, FTIR for local chemical bonding and ellisometry for optical constants. It has been demonstrated that the refractive index of SiO@sub x@N@sub y@ can be tuned from 1.6 to 2, while k can be adjusted from 0.1 to 0.9. Inductively coupled plasma (ICP) has been used to etch the SiO@sub x@N@sub y@ film for pattern transferring capability study with CHF@sub 3@+O@sub 2@ chemistry. CN emission line at 387 nm wavelength was used for endpoint. The profile of the etched SiO@sub x@N@sub y@ is studied by cross-section transmission electron microscopy (TEM). Finally, the SiO@sub x@N@sub y@ BARC application in combination with hard mask has been discussed