AVS 53rd International Symposium
    Plasma Science and Technology Friday Sessions
       Session PS2-FrM

Invited Paper PS2-FrM6
Advanced Plasma Sources for the Next-Generation Processing

Friday, November 17, 2006, 9:40 am, Room 2011

Session: Diagnostics
Presenter: H.-Y. Chang, Korea Advanced Institute of Technology (KAIST)
Authors: H.-Y. Chang, Korea Advanced Institute of Technology (KAIST)
S.-H. Seo, Korea Advanced Institute of Technology (KAIST)
Correspondent: Click to Email
As the feature sizes of devices have shrunk in recent plasma processing, plasma sources operating at low pressures (1-100mTorr) have been required for formation of good anisotropic patterns, high throughput, and damage-free process. Recently, the main subjects in developing a new plasma source have been the attainment of good uniformity in large area, the control of plasma parameters for the process optimization, and the development of new application area. Among several plasma sources, inductively coupled plasma (ICP), capacitively coupled plasma (CCP) and the ultra low electron temperature plasma sources have been the focus of keen interest as the new and efficient sources for many plasma processing including the semiconductor manufacturing because these have many attractive aspects such as their simple apparatus, relatively efficient plasma generation, good special uniformity, low and independently controlled ion energy, and scalability to large-area plasma sources.@footnote 1@ In this presentation, a couple of newly developing plasma sources will be introduced with the brief review of the electron heating mechanisms in plasma sources along with the recent experimental and theoretical results focusing on the electron energy distribution function (EEDF), ion energy distribution function(IEDF) and rf fields in the collisionless regime.@footnote 2,3@ In addition, some examples for the control of plasma parameters through adjusting rf frequency and power, operating pressure, gas mixing ratio,@footnote 4@ and other external parameters in order to optimize the process will be presented. @FootnoteText@@footnote 1@ S.H.Seo, C.W. Chung and H.Y.Chang: Surf and Coating Tech. 131(2000) 1-11 @footnote 2@ V.A.Godyak : Plasma Sources Sci. Technol. 3,169(1994) @footnote 3@ C.W.Chung and H.Y.Chang : Phys.Rev.Lett. @footnote 4@ K.H.Bai and H.Y .Chang: Physics of Plasma