AVS 53rd International Symposium
    Plasma Science and Technology Friday Sessions
       Session PS2-FrM

Paper PS2-FrM4
Application of In Situ Plasma Analysis on Deep Trench Plasma Etch Hardware Design and Process Development

Friday, November 17, 2006, 9:00 am, Room 2011

Session: Diagnostics
Presenter: M. Reinicke, Dresden University of Technology, Germany
Authors: S. Wege, Qimonda, Dresden, Germany
A. Steinbach, Qimonda, Dresden, Germany
S. Barth, Qimonda, Dresden, Germany
A. Henke, Qimonda, Dresden, Germany
J. Sobe, Qimonda, Dresden, Germany
M. Reinicke, Dresden University of Technology, Germany
J.-W. Bartha, Dresden University of Technology, Germany
G.D. Stancu, Institute of Low Temperature Plasma Physics, Germany
N. Lang, Institute of Low Temperature Plasma Physics, Germany
J. Roepke, Institute of Low Temperature Plasma Physics, Germany
Correspondent: Click to Email
Facing critical dimensions below 60nm requires significantly improved knowledge about the complex process mechanisms. In situ plasma analysis has been performed on different dual frequency capacitively coupled MERIE plasma reactors for DRAM technology development. High aspect ratio silicon etching mechanisms are investigated as a function of tool parameters for HBr, NF3, as well as HBr/O2/NF3 electronegative plasmas. Plasma analysis includes investigation of the influence of different plasma coupling on process results using an extensive set of planar Si and SiO2 etch rate experiments, feedstock etch gas dissociation studies, and further energy analysis of different etch species for a plasma and surface chemistry model using an in situ mass and energy plasma analyzer. For the first time, online concentration monitoring of etch species using Quantum Cascade Laser Absorption Spectroscopy is performed. Measurement results are used to extend the knowledge and insight of experimental plasma process conditions, and further as input parameters for simulations of conditions in plasma bulk and sheath, as well as structure development on wafer surface. A combined application of plasma analysis, simulation and process development on product wafers is an efficient way to optimize chamber hardware and process conditions, and to support process development.