AVS 53rd International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS1-WeM

Paper PS1-WeM5
Study of Energetic Ion and Radical Beams Interacting with Advanced Photoresist Polymers

Wednesday, November 15, 2006, 9:20 am, Room 2009

Session: Plasma-Surface Interactions II
Presenter: D.G. Nest, UC Berkeley
Authors: D.G. Nest, UC Berkeley
M. Goldman, UC Berkeley
D.B. Graves, UC Berkeley
S. Engelmann, Univ. of Maryland
R.L. Bruce, Univ. of Maryland
B.F. Smith, Univ. of Maryland
T. Kwon, Univ. of Maryland
R. Phaneuf, Univ. of Maryland
G.S. Oehrlein, Univ. of Maryland
C. Andes, Rohn and Haas Electronic Materials
E.A. Hudson, Lam Research Corp.
P. Lazzeri, ITC-Irst, Italy
M. Anderle, ITC-Irst, Italy
Correspondent: Click to Email
The effects of ions and radicals in plasmas on current and future photoresists (PR) are poorly understood, even though PR degradation is known to be an increasingly important problem for micro- and nano-fabrication. We report results from a collaborative study of etching and roughening mechanisms on fully formulated methacrylate-based 193 nm photoresists as well as on model polymers that make up the fully formulated compounds. We measure the effects of beams of ions and radicals impacting selected materials in vacuum to simulate plasma-photoresist interactions under controlled conditions. We highlight the importance of rare gas ion energy and mass and surface temperature on surface roughening and etching, both with and without chemical effects associated with radical impact. For example, Ar@super +@ impact at normal incidence and 1 keV results in a smooth PR surface, but 300 eV ion impact steadily roughens the surface. Surfaces impacted by Ar@super +@ at normal incidence and 500 eV are smooth at 25°C but steadily roughen at surface temperatures above about 40°C. Results of ion sputtering of patterned contact holes and trenches will be presented. Results are compared to measurements in plasmas where possible.