AVS 53rd International Symposium
    Nanometer-scale Science and Technology Monday Sessions
       Session NS-MoM

Paper NS-MoM1
A Novel Scanning Probe Microscope with MOS Transistor and Nano Tip

Monday, November 13, 2006, 8:00 am, Room 2016

Session: Nanoscale Imaging Techniques
Presenter: S.H. Lee, Pohang University of Science and Technology, Republic of Korea
Authors: S.H. Lee, Pohang University of Science and Technology, Republic of Korea
G. Lim, Pohang University of Science and Technology, Republic of Korea
W. Moon, Pohang University of Science and Technology, Republic of Korea
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A novel probe with the MOS transistor and the nano tip is fabricated for the SPM (Scanning Probe Microscope). The probe measures the electric field with high-aspect-ratio nano tip compared with the previous ones. It can be fabricated by the common semiconductor process and the FIB (Focused Ion Beam) process, and the resulting device can rapidly detect the electric signal with a high sensitivity. The SPMs have been developed and applied to various fields including the nano-scale measurement.@footnote 1,2@ However, sometimes the limited scanning speed and the requirement of additional equipments may become the major obstacles to such an application as data storage.@footnote 2@ To overcome these difficulties, the depletion phenomenon has been reported for the probes, but the resolution of tens or hundreds of nanometers is not solved.@footnote 3@ In this paper, we integrate the MOS transistor and the nano tip into a micro cantilever for maximizing electric signals from a localized region. Since the MOS transistor has high working frequency, the sensing speed cannot be a problem. The sensitivity is also high, and no bulky device such as lock-in-amplifier is required. Moreover, the nano tip by FIB has nanometer scale tip radius, and the resolution is very high. Therefore, the probe may increase various kinds of applications of the SPM technology since it can rapidly detect small localized charges with high sensitivity and high resolution. The device properties are investigated with the various electric signals. The measured data represent the well-established electric properties of the device, and it shows the promising aspect of the local electric field detection with high sensitivity and high resolution. @FootnoteText@ @footnote 1@ H. K. Wickramasinghe, Acta Mater., Vol. 48, No. 1, pp. 347-358, 2000@footnote 2@ M. Lutwyche et al., Sensors and Actuators, Vol. 73, pp. 89-94, 1999@footnote 3@ H. Park et al., App. Phys. Lett., Vol. 84, No. 10, pp. 1734-1736, 2004.