AVS 53rd International Symposium
    Manufacturing Science and Technology Thursday Sessions
       Session MS-ThA

Paper MS-ThA5
Micro-Probe CV and IV Analysis of Thin Dielectric Films in Product Wafer Scribe-Line Structures

Thursday, November 16, 2006, 3:20 pm, Room 2018

Session: Sensors, Metrology, and Control
Presenter: V.V. Souchkov, Frontier Semiconductor
Authors: V.V. Souchkov, Frontier Semiconductor
T.M.H. Wong, Frontier Semiconductor
V.N. Faifer, Frontier Semiconductor
M.I. Current, Frontier Semiconductor
Correspondent: Click to Email
A 50 µm metal probe has been coupled with pattern recognition optics and a precision stage for automated CV and IV testing of dielectric layers in scribe-line test structures on IC product wafers. Highly repeatable contact conditions are obtained though the use of a MEMS-based torsion balance spring mounting which provides capacitance measurements within 0.1% for repeated landings of the probe. High repeatability capacitance measurements provide for correspondingly high quality determination of dielectric characteristics, EOT, Vfb, Dit, Na and Qeff, from CV analysis. Dielectric leakage and breakdown characteristics, including Vbd, Qbd and TTBD, can be obtained for positive and negative ramped bias conditions. Examples of dielectrics include thin (1 nm) SiO@sub 2@, oxy-nitrides and Hf-based oxides as bare films and incorporated in capacitor structures.