| AVS 52nd International Symposium | |
| Surface Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SS1-WeA1 Invited Paper Structure and Reactivity of Nanoscale Faceted Surfaces T.E. Madey, I. Ermanoski, H. Wang, W. Chen, A.S.Y. Chan, E. Loginova, N.M. Jisrawi, Rutgers University, W. Swiech, University of Illinois at Urbana-Champaign |
| 2:40pm | SS1-WeA3 Atomistic Reasons for the Oxygen Induced Step Bunching on Rh(553) J. Gustafson, A. Resta, A. Mikkelsen, R. Westerstrom, J.N. Andersen, J. Weissenrieder, E. Lundgren, Lund University, Sweden, F. Mittendorfer, G. Kresse, Universität Wien, Austria, X. Torelles, Institut de Ciencia de Materials de Barcelona (C.S.I.C), Spain, S. Ferrer, ERSF, France, N. Kasper, Max-Planck Institut f@um u@r Metalforschung, Germany, M. Schmid, P. Varga, Technische Universität Wien, Austria |
| 3:00pm | SS1-WeA4 Atomic-Scale Visualization of Surface Alloys: Sb/Au(110) S.S. Parihar, V.L. Shneerson, R. Fung, H.T. Johnson-Steigelman, E.D. Lu, D.K. Saldin, P.F. Lyman, University of Wisconsin-Milwaukee |
| 3:20pm | SS1-WeA5 Adatom-Pair Chain Structures: Metastable Precursors to Island Formation on the Ge-Si(100) 2xN Alloyed Surface K.J. Solis, L.R. Williams, University of New Mexico, B.S. Swartzentruber, Sandia National Laboratories, S.M. Han, University of New Mexico |
| 3:40pm | SS1-WeA6 Growth and Subsequent Decomposition Kinetics of Very Thin Oxide on Si(001) Surface Studied by Real-Time RHEED Combined with AES S. Ogawa, Y. Takakuwa, IMRAM, Tohoku University, Japan |
| 4:00pm | SS1-WeA7 Surface Morphologies produced by Oxygen Etching of Stable and Unstable Si Surfaces A.A. Baski, M.L. Willis, J.W. Dickinson, J.L. Skrobiszewski, Virginia Commonwealth University |
| 4:20pm | SS1-WeA8 Cyclic Transformation of 1-D Structures during Homoepitaxy of Si(5 5 12)-2x1 H. Kim, Y. Cho, J.M. Seo, Chonbuk National University, Korea |
| 4:40pm | SS1-WeA9 Intrinsic Vacancy-Induced Nanostructure of Al@sub 2@Se@sub 3@: Another New Silicon Compatible Chalcogenide Based Semiconductor C.Y. Lu, J.A. Adams, D.A. Schmidt, X. Li, Q. Yu, M.A. Olmstead, F.S. Ohuchi, University of Washington |