AVS 52nd International Symposium
    Surface Science Wednesday Sessions
       Session SS1-WeA

Paper SS1-WeA6
Growth and Subsequent Decomposition Kinetics of Very Thin Oxide on Si(001) Surface Studied by Real-Time RHEED Combined with AES

Wednesday, November 2, 2005, 3:40 pm, Room 200

Session: Surface Structure and Morphology Modification
Presenter: S. Ogawa, IMRAM, Tohoku University, Japan
Authors: S. Ogawa, IMRAM, Tohoku University, Japan
Y. Takakuwa, IMRAM, Tohoku University, Japan
Correspondent: Click to Email
In order to clarify the rate-limiting reaction of layer-by-layer oxidation on Si surfaces, the growth and subsequent decomposition kinetics of very thin oxide on the Si(001)2X1 surfaces were investigated by a real-time monitoring method of Reflection High Energy Electron Diffraction combined with Auger Electron Spectroscopy (RHEED-AES) to measure the oxide coverage and surface structure/morphology simultaneously. The 1@super st@ oxide layer was grown by two oxidation manners of Langmuir-type adsorption at 500°C and two-dimensional (2D) oxide island growth at 690°C under 2X10@super -6@ Torr of O@sub 2@ pressure. No progress of 2@super nd@ oxide layer growth was observed after completion of 2D oxide island growth, although the 2@super nd@ oxide layer can grow gradually following the Langmuir-type adsorption. It is difficult to interpret the observed difference in the 2@super nd@ oxide layer growth kinetics, because the observed tendency is contrary to thermal activation from 500°C to 690°C. Furthermore, thermal decomposition of the oxide grown at 690°C is more difficult than that grown at 500°C. Thus the rate of 2@super nd@ oxide layer growth is closely concerned with that of decomposition. The reason for the correlation is quantitatively discussed with the time of void nucleation measured as a function of oxidation time after completion of 1@super st@ oxide layer growth.