| AVS 52nd International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS1-MoA1 Reduction of Line Edge Roughness for 65nm Technology Node for Etched Contact Holes B. Goodlin, D. Farber, T. Lii, G. Shinn, Texas Instruments Incorporated |
| 2:20pm | PS1-MoA2 Difference in Etch Depth between Isolated and Dense Holes in Via-Etching of SiOC Film Y. Momonoi, Hitachi, Ltd., Japan, K. Yonekura, Renesas Technology Corp. |
| 2:40pm | PS1-MoA3 Etching Mechanisms of Low-k Material with the Solid First@superTM@ ILD Process in Fluorocarbon based Plasma T. Chevolleau, D. Eon, M. Darnon, L. Vallier, O. Joubert, CNRS/LTM, France |
| 3:00pm | PS1-MoA4 The Role of Inert Diluents in Low Pressure Electronegative Fluorinated Gas Discharges under Dual Frequency Excitation M. Hussein, M. Abdelrahman, Intel Corporation |
| 3:20pm | PS1-MoA5 Invited Paper Polymer Management in Dielectric Etch E.A. Hudson, A. Marakhtanov, K. Takeshita, Lam Research Corp. |
| 4:00pm | PS1-MoA7 Polymer Management in Advance Dielectric Etch Applications G.A. Delgadino, D. Buchberger, Y. Zhou, Y. Xiao, Applied Materials, Inc. |
| 4:20pm | PS1-MoA8 Analysis and Impact of F Penetration into low-k Dielectrics during Plasma Etch R. Augur, C. Labelle, Advanced Micro Devices Inc., C. Parks, S. Mehta, N.C.M. Fuller, IBM Corporation |
| 4:40pm | PS1-MoA9 Effect of Species Density and Ion Scattering During Ashing on Ultra Low-@kappa@ Inter-Level Dielectric Films M.A. Worsley, S.F. Bent, Stanford University, N.C.M. Fuller, J. Doyle, M. Rothwell, IBM TJ Watson Research Center, T.L. Tai, IBM Microelectronics Division, T.J. Dalton, IBM TJ Watson Research Center |
| 5:00pm | PS1-MoA10 Behaviors of Fluorocarbon Radical Temperature in Ar/N@sub 2@/C@sub 4@F@sub 8@ low-k Etching Plasma M. Nagai, M. Hori, Nagoya University, Japan |