| AVS 52nd International Symposium | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-WeA1 Effect of Si on the Ohmic Behavior of Ti/Al/Mo/Au Metallization for AlGaN/GaN HEMTs F.M. Mohammed, L. Wang, H.J. Koo, I. Adesida, University of Illinois at Urbana-Champaign |
| 2:20pm | EM-WeA2 Non-uniform Interfacial Reactions of Ti/Al/Mo/Au Ohmic Contacts on n-AlGaN/GaN Heterostructure and its Effect on Carrier Transport L. Wang, F.M. Mohammed, I. Adesida, University of Illinios at Urbana-Champaign |
| 2:40pm | EM-WeA3 Polarization-enhanced Ohmic Contacts to GaInN-based Blue Light-Emitting Diodes T. Gessmann, Y.A. Xi, H. Luo, J.K. Kim, J.Q. Xi, K. Chen, E.F. Schubert, Rensselaer Polytechnic Institute |
| 3:00pm | EM-WeA4 Indium-based Ohmic Contacts to n-GaSb and the Influence of Surface Passivation J.A. Robinson, S.E. Mohney, The Pennsylvania State University |
| 3:20pm | EM-WeA5 Invited Paper Controlling Interfacial Reactions in Ferromagnetic Metal / GaAs Heterostructures B.D. Schultz, University of Minnesota |
| 4:00pm | EM-WeA7 Molecular Beam Epitaxial Growth of Sc@sub x@Er@sub 1-x@Sb on III-V Compound Semiconductors S.G. Choi, Univerrsity of Minnesota, B.D. Schultz, C.J. Palmstrom, University of Minnesota |
| 4:20pm | EM-WeA8 Chemically-Induced Point Defects and Schottky Barrier Formation at Metal/4H-SiC Interfaces L.J. Brillson, S. Tumakha, M. Gao, The Ohio State University, S. Tsukimoto, M. Murakami, Kyoto University, Japan, D.J. Ewing, L. Porter, Carnegie Mellon University |
| 4:40pm | EM-WeA9 Metal Germanide Schottky Contacts to Relaxed and Strained Germanium A. Khakifirooz, O.M. Nayfeh, M.L. Lee, E. Fitzgerald, D.A. Antoniadis, Massachusetts Institute of Technology |
| 5:00pm | EM-WeA10 Ni Diffusion Studies From NiSi/Hf-based High-K Dielectric Stack Into Si P. Zhao, M.J. Kim, B.E. Gnade, R.M. Wallace, University of Texas at Dallas |