AVS 52nd International Symposium
    Thin Films Wednesday Sessions
       Session TF+EM-WeM

Invited Paper TF+EM-WeM1
In-situ Infrared Absorption Spectroscopy of High-k Dielectrics Growth on Semiconductors

Wednesday, November 2, 2005, 8:20 am, Room 310

Session: In-Situ/ Ex-Situ & Real- Time Monitoring
Presenter: Y.J. Chabal, Rutgers University
Authors: Y.J. Chabal, Rutgers University
S. Rivillon, Rutgers University
Y. Wang, Rutgers University
K. Bratland, Rutgers University
M.-T. Ho, Rutgers University
Correspondent: Click to Email
Atomic Layer Deposition (ALD) is a particularly attractive method to grow a variety of heterostructures on semiconductors. It makes it possible for instance to deposit ultra-thin and near stoichiometric high-k dielectric metal oxides films one layer at a time in a highly conformal manner. For microelectronics applications, controlling the nature of the semiconductor/oxide interface and the oxide film itself is critical. For instance, formation of an interfacial SiO2 layer during metal oxide growth or incorporation of excess oxygen in the oxide is a major detriment to the performance of future MOSFETs. This talk discusses the use of in-situ infrared (IR) absorption spectroscopy to optimize silicon and germanium wafer pretreatments, to monitor interface formation during growth and to control the nature of metal oxides. For this work, a simple ALD reactor has been designed to be compatible with efficient transmission IR spectroscopy. The effects of surface chemical functionalization of H-terminated Si and Ge surfaces with Cl, NH3 prior to and thermal annealing after Al2O3 and HfO2 deposition have been investigated with emphasis on identifying the presence and bonding of oxygen at the interface. The mechanism for oxygen incorporation have been identified resulting in a much better control of the interface.