AVS 52nd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP2
Study of Deposition Precursors in Amorphous Silicon Nitride Film Deposited by Plasma CVD

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Plasma Science and Technology Poster Session
Presenter: Y. Ichikawa, Fuji Electric Device Technology, Japan
Authors: Y. Ichikawa, Fuji Electric Device Technology, Japan
M. Narita, Fuji Electric Device Technology, Japan
S. Fujikake, Fuji Electric Advanced Technology, Japan
Correspondent: Click to Email
To understand the deposition mechanism of hydrogenated amorphous silicon nitride film (a-SiN:H) deposited by plasma CVD, we have studied the deposition precursors and their effective sticking coefficient both in SiH@sub 4@-NH@sub 3@ and SiH@sub 4@-N@sub 2@ gas mixture systems. The a-SiN:H films were deposited on a silicon wafer where a number of trenches with a width of 1µm were formed by etching, and then their film thickness profiles and composition on the trench wall were measured. These experimental results were compared with Monte-Carlo simulation to estimate the species of precursors and their vanishing probability on the deposition surface. The results showed that in SiH@sub 4@-NH@sub 3@ system the dominant precursor is one species (with a vanishing probability of 0.08) and the composition of the film does not vary along the trench wall. On the other hand, in SiH@sub 4@-N@sub 2@ system two species have to be taken into account to fit the simulation with experimental results; one species has a vanishing probability of 0.8 and the other has that of 0.05. Moreover, the composition of the film varies along the trench wall; the ratio of nitrogen to silicon increases with increasing distance from the surface in a trench.