AVS 52nd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP19
PLAD Dopant Depth Profile Based on Ion Mass and Energy Distribution for Ultra Low Energy Implantation

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Plasma Science and Technology Poster Session
Presenter: L. Godet, VSEA
Authors: L. Godet, VSEA
S. Walther, VSEA
S. Radovanov, VSEA
Z. Fang, VSEA
J. Scheuer, VSEA
G. Cartry, Nantes University, France
C. Cardinaud, Nantes University, France
Correspondent: Click to Email
With standard ion implantation technology, the energy and the mass of the ions striking the wafer are well known and simulations such as Transport of Ions in Matter (TRIM)@footnote 1@ are available to predict dopant depth distribution. During the plasma doping process,@footnote 2@ all the ion species present during the negative voltage pulse applied to the substrate are implanted with an energy spread that is dependent on many plasma parameters. To predict the junction depth and the dopant concentration of a plasma doping implant, the knowledge of the chemical nature of the ion species bombarding the wafer, their energy and their proportion of the total ion flux incident on the wafer are needed. In order to provide this essential information, an ion mass and energy spectrometer is installed below the wafer. The ion mass and energy distributions of the ions striking the wafer with energy range from 250V to 1kV have been measured. Secondary Ion Mass Spectrometry (SIMS) was performed to measure the dopant depth profile under the same conditions. Based on the knowledge of the energy distribution of each species of dopant ion present in the pulsed discharge, a TRIM simulation was performed to model the dopant depth profile in the silicon and compared to SIMS profile. @FootnoteText@ @footnote 1@The Stopping and Range of Ions in Solids, J. F. Ziegler,1985@footnote 2@Plasma Diagnostics in pulsed plasma doping system, B.-W. Koo, IEEE, 2004