AVS 52nd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP14
Plasma Simulation for Plasma-based Ion Implantation Sterilization Technique

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Plasma Science and Technology Poster Session
Presenter: T. Tanaka, Hiroshima Institute of Technology, Japan
Authors: T. Tanaka, Hiroshima Institute of Technology, Japan
M. Tanaka, PEGASUS Software Inc., Japan
D. Nakamura, TWO CELL CO. Ltd., Japan
H. Fukuyama, Kobe Steel Ltd., Japan
T. Takagi, Hiroshima Institute of Technology, Japan
Correspondent: Click to Email
Plasma-based ion implantation (PBII) sterilization technique is one of the promising sterilization process for three-dimensional work pieces with low temperature, short process time, and no toxic gas. The energy of nitrogen ion used PBII sterilization process with a pulsed negative high voltage (5 usec pulse width, 300 pulses/s, -800 V to -13kV) was estimated using a simple method based on secondary-ion mass spectroscopy analysis of the vertical distribution of nitrogen in PBII-treated Si. The ion energy was calculated based on the depth profile of nitrogen in ion implanted and was low compared to the nitrogen energy calculated based on the voltage applied during processing. It was shown that the experimentally estimated ion energy was at the same level of the value estimated using the plasma simulation. It was shown that the possibility of the design sterilization process and apparatus by using the plasma simulation.