AVS 52nd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuM

Paper PS-TuM11
IRIS Studies of SiCl@sub x@ Surface Interactions in SiCl@sub 4@ Plasmas

Tuesday, November 1, 2005, 11:40 am, Room 304

Session: Plasma Surface Interactions I
Presenter: I.T. Martin, Colorado State University
Authors: I.T. Martin, Colorado State University
D. Liu, Colorado State University
E.R. Fisher, Colorado State University
Correspondent: Click to Email
Chlorine based plasmas, such as SiCl@sub 4@, are widely used for Si etch processes. Additionally, SiCl@sub 4@/H@sub 2@ plasmas are utilized to deposit a-Si materials. We have characterized SiCl@sub 4@-based plasma systems using LIF, OES, and MS measurements. Density measurements indicate that relative SiCl@sub 2@ densities strongly rely on plasma parameters such as power and pressure. We have used our imaging of radicals interacting with surfaces (IRIS) method to measure the surface interactions of SiCl@sub 2@ radicals with Si substrates in SiCl@sub 4@-based etch and deposition systems. Preliminary data show significant SiCl@sub 2@ surface production (S(SiCl@sub 2@)>2) in all etch systems. These results will be compared to SiF@sub 2@ and CF@sub 2@ IRIS data, as these molecules are isoelectronic to SiCl@sub 2@. Our results indicate all three molecules behave similarly under etching conditions. Surface interaction data from power, pressure and feed-gas ratio dependence studies will be presented for both etching and deposition plasmas. SiCl@sub 2@ IRIS data will also be compared to previous experimental and theoretical work on SiCl@sub 2@ surface interactions.