AVS 52nd International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS-MoM

Paper PS-MoM10
Prediction of Plasma UV Radiation Damages Using On-wafer Monitoring Sensors

Monday, October 31, 2005, 11:20 am, Room 302

Session: Plasma Diagnostics
Presenter: Y. Kato, Tohoku University, Japan
Authors: Y. Kato, Tohoku University, Japan
Y. Ishikawa, Tohoku University, Japan
M. Okigawa, Tohoku University, Japan
S. Samukawa, Tohoku University, Japan
Correspondent: Click to Email
We have proposed a simple on-wafer monitoring sensor for prediction of UV and VUV photon radiation damages. In this sensor, the electrical currents were induced in the dielectric film and they could be measured by the plasma radiation. We first found that the current was completely corresponding to the generation density of hole-electron pairs in dielectric films and to the increase in interface state at the interface between the dielectric film and silicon under plasma irradiation. In this paper, the relationship between the induced electrical current in the sensor and plasma discharge conditions was investigated to predict the UV radiation damages. The dependence of the induced currents in the sensor on the plasma generation power, discharge pressure and gas flow rate was evaluated. Based on these results, we found that the UV radiation damages could be predicted and the low damage processes could be proposed for plasma etching processes.