AVS 52nd International Symposium
    Plasma Science and Technology Thursday Sessions
       Session PS+TF-ThA

Paper PS+TF-ThA10
High Density Plasma Processing of Si Nanocrystal Embedded SiO@sub x@ Thin Films

Thursday, November 3, 2005, 5:00 pm, Room 302

Session: Emerging Plasma Applications
Presenter: P.C. Joshi, SHARP Labs of America, Inc.
Authors: P.C. Joshi, SHARP Labs of America, Inc.
T.K. Li, SHARP Labs of America, Inc.
W. Gao, SHARP Labs of America, Inc.
Y. Ono, SHARP Labs of America, Inc.
A.T. Voutsas, SHARP Labs of America, Inc.
J.W. Hartzell, SHARP Labs of America, Inc.
S.T. Hsu, SHARP Labs of America, Inc.
Correspondent: Click to Email
The optical properties of Si nanocrystals are of interest for efficient and low cost integrated optoelectronic applications. The fabrication of novel optoelectronic devices, exploiting the unique optical properties of Si nanocrystals, requires thin films with high PL/EL quantum efficiency. One approach that is being actively pursued for optoelectronic devices is the fabrication of Si nanocrystal embedded SiO@sub x@ thin films. The development of stable and reliable optical devices requires thin films with high concentration and uniform distribution of Si nanocrystals with controlled particle size. In this paper, we report on the high-density plasma processing of Si nanocrystal embedded SiO@sub x@ thin films. The high-density plasma technique is characterized by low plasma potential, high plasma density, and independent control of plasma energy and density; which provide unique process possibilities and control. The high plasma concentration and low plasma potential of the HDP process are attractive for the generation of Si nanocrystals while minimizing the plasma induced bulk and interfacial damage. We have been successful in controlling the optical properties SiO@sub x@ thin films and the wavelength of the emitted PL signal over a wide range exploiting the unique characteristics of the high-density PECVD technique. The present paper describes a correlation between the optical properties and the PL characteristics of the SiO@sub x@ thin films deposited in the temperature range of 25-300 °C. The high-density plasma deposited SiO@sub x@ films have shown PL signal even in the as-deposited state while subsequent annealing (900-1100 °C) has resulted in significant enhancement of the PL intensity. The present results demonstrate the potential of the high-density PECVD technique for the low temperature processing of the Si nanocrystal embedded SiO@sub x@ thin films with controlled physical and optical characteristics for novel optoelectronic applications.