AVS 52nd International Symposium
    Plasma Science and Technology Thursday Sessions
       Session PS+MS-ThM

Paper PS+MS-ThM3
Coupled Analysis of Inductively-coupled CF@sub 4@ Plasmas and Radicals Flow

Thursday, November 3, 2005, 9:00 am, Room 302

Session: Process Equipment Modeling
Presenter: H. Takekida, Tohoku University, Japan
Authors: H. Takekida, Tohoku University, Japan
K. Nanbu, Tohoku University, Japan
Correspondent: Click to Email
Inductively-coupled CF@sub 4@ plasmas are widely used for the etching of oxide films. In the present work, plasma and flow in an inductively-coupled CF@sub 4@ plasma reactor are simulated simultaneously. The plasma structure and the production rates of CF radicals are examined using the Particle-in-Cell Monte/Carlo (PIC/MC) method. We included low frequency wafer biasing in the plasma simulation. The radicals flow is examined using the direct simulation Monte/Carlo (DSMC) method for which the production rate of CF@sub x@ radicals is the input data from the plasma simulation. The etching reaction on the oxide wafer and the etch products are taken into consideration in the DSMC. After the flow simulation is finished, plasma simulation is improved using the spatial distribution of background CF@sub 4@ gas which is derived from the flow simulation. We repeated a set of these plasma and flow simulation until we obtain a convergence. We compare the results with the ones where the density of background gas CF@sub 4@ is assumed to be uniform. We clarified the effect of gas flow on the CF@sub 4@ plasma structure by the use of coupled analysis. We have found that the radicals flow has a large effect on the spatial distribution of plasma density.