AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Wednesday Sessions
       Session NS-WeM

Paper NS-WeM9
Development and Characterisation of Reference Materials for Nanotechnology: High Lateral Resolution Auger Electron Spectroscopy on Semiconductor Heterostructures

Wednesday, November 2, 2005, 11:00 am, Room 210

Session: Nanometer Scale Imaging
Presenter: U. Roll, Omicron NanoTechnology GmbH, Germany
Authors: J. Westermann, Omicron NanoTechnology GmbH, Germany
U. Roll, Omicron NanoTechnology GmbH, Germany
M. Senoner, Federal Institute for Materials Research and Testing, BAM, Germany
W. Unger, Federal Institute for Materials Research and Testing, BAM, Germany
Correspondent: Click to Email
Today, a broad variety of different techniques and instruments is used to characterise nanoscale materials. However, a comparison between results taken with different instruments is often difficult or impossible. To overcome this gap, the Federal Institute for Materials Research and Testing (BAM), the Physikalisch-Technische Bundesanstalt, ION-TOF GmbH and Omicron Nanotechnology GmbH have entered into a project to develop reference samples with nanoscale structures. We report on the characterisation of the first prototype of a semiconductor heterostructure with alternating AlGaAs and GaAs layers. The cross section of the epitaxially grown multilayer stack shows a variety of strips in the thickness range between 700nm and well below 10nm. The strip pattern includes strip gratings, isolated narrow strips and wide strips with step transitions. SEM and Auger measurements with highest lateral resolution (sub 10 nm) reveal the distribution of the various elements on the sample surface, and prove the quality of the sample preparation. We discuss the suitability of the sample to become a widely accepted, certified reference standard for lateral resolution in surface chemical analysis.