AVS 52nd International Symposium
    Manufacturing Science and Technology Wednesday Sessions
       Session MS-WeA

Paper MS-WeA2
Method for Creating Cross-Sectional TEM Single Crystal Diamond Samples using Focused Ion Beam and In-Situ Lift Out

Wednesday, November 2, 2005, 2:20 pm, Room 207

Session: Metrology & Process Control for Advanced Manufacturing
Presenter: D.P. Hickey, University of Florida
Authors: D.P. Hickey, University of Florida
E. Kuryliw, University of Florida
K.S. Jones, University of Florida
Correspondent: Click to Email
A method is described for creating a transmission electron microscope (TEM) cross section of single crystal diamond using a focused ion beam (FIB) and in-situ lift-out. The method results in samples less than 50 nm thick at the tip and approximately 100-300 nm thick across the length, and does not require a large amount of starting material. Few TEM studies of single crystal diamond have been reported, most likely due to the time and difficulty involved in sample preparation. This technique can create a cross-sectional TEM sample in less than five hours. Creating cross-sectional TEM samples for single crystal diamond are slightly different than silicon due to the exceptional hardness and insulating properties of the diamond. The method also allows for additional thinning for use with high-resolution TEM imaging. The method is applied to oddly shaped diamond samples, and does not require a wafer-flat sample to create a TEM sample. This sample preparation technique has been applied to the study of ion implantation damage in single crystal diamond and its evolution upon annealing.