AVS 52nd International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeA

Paper AS-WeA9
Comparison of TOF-SIMS and XPS Analysis Using a C@sub 60@ Ion Sputter Cleaning

Wednesday, November 2, 2005, 4:40 pm, Room 206

Session: SIMS Cluster Probe Beams and General Topics
Presenter: N. Sanada, ULVAC-PHI, Inc., Japan
Authors: N. Sanada, ULVAC-PHI, Inc., Japan
T. Miyayama, ULVAC-PHI, Inc., Japan
J.S. Hammond, ULVAC-PHI, Inc., Japan
J.F. Moulder, Physical Electronics
S.R. Bryan, Physical Electronics
Correspondent: Click to Email
The analysis of chemical layers buried in the near surface region from 1 to 100 nm is of great interest to polymer and biomaterials scientists. However, it has been a great challenge to get chemical information from this region of some materials because of chemical damage observed following ion beam sputtering. Recently, we have applied a buckminsterfullerene (C@sub 60@) ion beam for sputter cleaning and depth profiling to minimize chemical damage for organic and inorganic materials.@footnote 1@ Extremely low sputtering degradation of many organic materials such as polytetrafluoroethylene,@footnote 1@ polyesters, gelatins, and multilayer latex materials@footnote 2@ were observed by XPS. The effects of different C@sub 60@ ion beam accelerating voltages and impact angles on accumulation of residual carbon and chemical damage were examined with XPS using standard samples of polyethyleneterephthalate (PET) and SiO@sub 2@. The quantities of carbon residue in the SiO@sub 2@ film reduced as the increasing accelerating voltages. The impact angle of the ion beam also affected the carbon residue in the film.@footnote 3@ Based on these experiments, an optimized protocol for using a C@sub 60@ ion beam with XPS was developed. We will discuss TOF-SIMS analysis of polymers after sputter cleaning with a C@sub 60@ ion beam under the protocol optimized with XPS. For many polymers, the high energy resolution XPS spectra following C@sub 60@ ion beam exposure showed a constant elemental and functional group stochiometry. The higher sensitivity of TOF-SIMS analysis of these materials allows an examination of more subtle changes induced by the C@sub 60@ ion beam not observed in the XPS analysis. @FootnoteText@ @footnote 1@ N. Sanada et al., Surf. Interface Anal., 36 (2004) 280.@footnote 2@ D. Sakai, et al., J. Surf. Anal. (Tokyo), submitted.@footnote 3@ N. Sanada, et al., AVS 51st. Int. Symp. As-TuM5.