AVS 52nd International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeA

Paper AS-WeA6
Adjacent Electron Beam Method for SIMS Analysis of Insulators at High Depth Resolution Conditions Using a Magnetic Sector Instrument

Wednesday, November 2, 2005, 3:40 pm, Room 206

Session: SIMS Cluster Probe Beams and General Topics
Presenter: F.A. Stevie, North Carolina State University
Authors: C. Gu, North Carolina State University
Z. Zhu, North Carolina State University
F.A. Stevie, North Carolina State University
D.P. Griffis, North Carolina State University
Correspondent: Click to Email

The adjacent electron beam charge neutralization method@footnote 1@ provides sufficient and self regulating charge neutralization for positive secondary ion SIMS analysis of both bulk and thick layer insulators using a magnetic sector instrument. This charge neutralization method has been extended to low primary ion impact energies, thus providing the ability to obtain high depth resolution SIMS analysis of both bulk and thick film insulating materials at high mass resolution. Results have been achieved with O@sub 2@@super +@ impact energy of 1.25keV and electron impact energy of 2.75keV. All prior analyses had been made using 5.5keV for O@sub 2@@super +@ and 6.5keV electron energy. Charge neutralization has been achieved for SiO@sub 2@, AlN, and AlGaN samples. Profiles have been obtained through at least two micrometers of insulator under the low impact energy conditions. While being able to profile through thick films is important, the real significance in these results is the ability to provide high depth resolution SIMS analysis of insulating materials. Electron impact charge neutralization using the adjacent electron beam method has been achieved with the following metal coatings: Al, Au, Ru, and Ir. Results will be presented demonstrating this method for both bulk and thick film insulating materials and current understanding of the mechanisms involved in this method of self regulating charge neutralization will be discussed. @FootnoteText@ @footnote 1@ A. L. Pivovarov, F. A. Stevie, and D. P. Griffis, SIMS XIV Proceedings, Applied Surface Science 231-232, 786-790 (2004).