AVS 52nd International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeA

Invited Paper AS-WeA3
Depth Profiling Analysis by Secondary Ion Mass Spectrometry: Historical Perspective and Current State-of-the-Art

Wednesday, November 2, 2005, 2:40 pm, Room 206

Session: SIMS Cluster Probe Beams and General Topics
Presenter: C.W. Magee, Evans East
Correspondent: Click to Email

Secondary ion mass spectrometry has been used for in-depth characterization of materials and process for over 30 years. This talk will first touch briefly on history of SIMS depth profiling and then will review current state-of-the-art examples in semiconductors materials as well as in other areas as diverse from IC chips as potato chip bags and, yes, even the kitchen sink. Semiconductor areas will include, among others: profiling of ion implants with energies of a few hundred eV to a few million eV, along with high precision dose determination; and analyses of dopants and matrix elements in areas only a few 10’s of um@super 2@. In addition, the talk will illustrate the utility of backside polishing for sample preparation.